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The new series of MCUs, the RA8P1 group, are specifically targeted at AI, ML, and real-time analytics applications. Thanks to TinyML models, devices that are more constrained both in terms of board ...

The GaN manufacturing landscape is seeing continual shifts over time. The power gallium nitride (GaN) manufacturing landscape is seeing continual shifts over time. As technology reaches more greater ...

Charging technology has improved significantly in recent years. Devices like phones, tablets, and laptops now power up much faster than they used to. Still, most traditional chargers come with a few ...

时隔5年，历时4年，耗时2年的《PyTorch实用教程》（第二版）完成了。在第一版的精华之上 ...

Abstract: This work introduces a novel accelerated lifetime testing (ALT) methodology for Lateral GaN-on-Si high electron mobility transistors (HEMTs) called “Three Factor Acceleration Testing.” By ...

Chinese researchers have discovered the leading cause of defects in the promising semiconductor material gallium nitride (GaN). This material is critical for developing advanced electronics, ...

GaN power semiconductors are on a tremendous growth trajectory. GaN is on its way to reaching more tipping points in its adoption in more industries. Consumer chargers and adapters have been the ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

GaN-inspired advances in on-board battery chargers. How AlGaN/GaN HEMTs deliver high switching frequencies. Buck converter reference design for 48-V apps that leverages GaN FETs. Electric vehicles ...