Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: With the continuous development of power electronics technology, PWM-controlled single-phase bridge inverters have a wide range of applications in real life. In this design, the inverter ...
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