Abstract: Diamond is desirable for the application in power device due to its extremely high theoretical breakdown electric field (>10 MV/cm). However, because of electric field crowding, relatively ...
Abstract: A SnO2 thin layer was deposited between the diamond and Schottky electrode to fabricate the metal–insulator–semiconductor Schottky barrier diode (MIS-SBD). The current–voltage and ...
UR CESAM, GREEnMat, University of Liège, Allée du Six Août 13, B-4000 Liège, Belgium ...
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