An SCR topology transmogrifies into BJT two-wire precision current source with a self-resetting fault-current limiter.
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Abstract: GaN HEMT devices exhibit lower short-circuit capability, posing significant risks in practical applications. This paper presents a fast short circuit (SC) protection circuit for ohmic gate P ...
Abstract: Series connection of Silicon carbide (SiC) MOSFETs is needed for increasing the blocking voltage of available power devices (limited to 3.3 kV in the market) and has been extensively studied ...