Abstract: The cause of failures in insulated gate bipolar transistor (IGBT) modules is primarily attributed to temperature-related factors. Accurately estimating the junction temperature of IGBT ...
Abstract: Package degradation for high power insulated gate bipolar transistors (IGBTs) modules would seriously affect the operation safety of power electronic converters. Due to the variety of ...
Higher power density, smaller form factors and long-life reliability expectations all collide, requiring better thermal ...
The "The Global Power Electronics Market 2026-2036" has been added to ResearchAndMarkets.com's offering. The global power electronics market is projected to grow with a CAGR exceeding 8%, adding over ...
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