IEEE

Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures

Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
IEEE

Application of Extrapolation Capability of Vector Fitting for Out-of-Band Dominant Modal Synthesis of Voltage-Source Converters

Abstract: Conventional state-space-based stability assessment method of voltage-source converters (VSCs) can be hindered by the black-box feature. Black box-based state-space model identification ...