The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.
Expanded supply agreement is now worth approximately $275M and demonstrates continued demand for silicon carbide across several critical industries The adoption of silicon carbide-based power ...
Wolfspeed holds a key SiC position with OEM ties and IP, priced at ~8x sales as a 200mm ramp, utilization, and margins remain ...
FREMONT, Calif., Dec. 07, 2022 (GLOBE NEWSWIRE) -- Aehr Test Systems (NASDAQ: AEHR), a worldwide supplier of semiconductor production test and reliability qualification equipment, today announced it ...
TOKYO & DURHAM, N.C.--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and ...
Wolfspeed, Inc. (NYSE: WOLF), a global leader in silicon carbide technology, today announced a significant industry milestone ...
A Michigan manufacturer of silicon carbide (SiC) wafers, a key component in EV power electronics, just got a big loan from the US Department of Energy to ramp up production. SK Siltron CSS announced ...
MUNICH & DURHAM, N.C.--(BUSINESS WIRE)--Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a global semiconductor leader in power systems and IoT, and Wolfspeed, Inc. (NYSE: WOLF), a global leader in ...
Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron ...
Kyoto, Japan and Geneva, Switzerland, January 15, 2020 – ROHM (TSE: 6963) and STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics ...
BAY CITY, Mich. (AP) — The U.S. Department of Energy announced a conditional $544 million loan Thursday that would allow a Michigan semiconductor manufacturing plant to expand to make parts that can ...
Cree has announced that it can now take orders for 4-in. n-type silicon carbide (SiC) substrates and epitaxy material. The current Cree standard for SiC is 3-in. diameter material. Cree has announced ...